Ferroelectricity in Doped Hafnium Oxide 2nd Edition

Ferroelectricity in Doped Hafnium Oxide — 2nd Edition (Author:) is a definitive, up-to-date resource for scientists and engineers working at the cutting edge of ferroelectric HfO2 research and semiconductor device integration. Clear, concise, and comprehensive, this edition synthesizes the latest advances in doping strategies, phase stabilization, and thin‑film processing that have transformed hafnium oxide into a practical ferroelectric for memory, logic, and sensor applications.

Readers will find accessible explanations of fundamental mechanisms—crystal phases, defect chemistry, and polarization switching—paired with practical coverage of characterization techniques, device architectures (FeRAM, FeFET), reliability challenges, and scaling paths for CMOS-compatible integration. The book balances theoretical insight with hands-on guidance for fabrication, modeling, and failure analysis, making complex topics usable in the lab and on the production floor.

Ideal for materials scientists, device engineers, graduate students, and R&D teams across Silicon Valley, Taiwan, South Korea, Japan, Europe, and beyond, this volume helps bridge academic research and industrial application. Whether you’re optimizing dopant profiles, troubleshooting endurance and retention, or designing next-generation non‑volatile memory, the 2nd edition delivers actionable knowledge to accelerate development.

Stay current with the global shift toward ferroelectric HfO2 technologies—add Ferroelectricity in Doped Hafnium Oxide — 2nd Edition to your professional library and equip your team with the insights needed to innovate in ferroelectric materials and semiconductor devices.

Note: eBooks do not include supplementary materials such as CDs, access codes, etc.