Ferroelectric-Gate Field Effect Transistor Memories 2nd Edition

Discover the cutting-edge realm of nanoelectronics with Ferroelectric-Gate Field Effect Transistor Memories, 2nd Edition by ByungEun Park, Hiroshi Ishiwara, and Masanori Okuyama. This comprehensive volume delves into the innovative applications and advancements of ferroelectric materials in memory technologies. With detailed insights on device architecture, operational principles, and recent breakthroughs, this edition serves as an essential resource for researchers and practitioners alike. The authors expertly bridge theoretical foundations with practical implementations, making complex concepts accessible. Elevate your understanding of the future of memory systems with this indispensable guide, a must-have for anyone passionate about electronics and materials science.

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