Defect-Induced Magnetism in Oxide Semiconductors 1st Edition

Defect-Induced Magnetism in Oxide Semiconductors (1st Edition) by Parmod Kumar is a compelling, must-have reference for researchers, graduate students, and engineers working in materials science, condensed matter physics, and spintronics. This authoritative volume illuminates the surprising magnetic behaviors that arise from native defects, vacancies, and dopants in oxide semiconductors, bridging fundamental theory with practical implications for next-generation devices.

Start with clear, engaging explanations of the physical mechanisms behind defect-induced magnetism, then move into rigorous discussions of theoretical models and experimental characterization techniques used worldwide—from SQUID magnetometry to advanced spectroscopies and microscopy. The book contextualizes findings across popular oxide systems (including TiO2, ZnO and related compounds), showing how subtle structural and electronic changes can produce robust magnetic responses that matter for sensors, memory and spintronic applications.

Designed for an international audience—readers in India, Europe, North America and Asia will find the content directly relevant—this edition emphasizes reproducible experiments, critical analysis of controversies, and pathways for translating laboratory discoveries into device concepts. Clear figures, concise summaries and practical insights make complex topics accessible without sacrificing scientific depth.

Whether you’re building a research program, preparing a thesis, or exploring applied magnetism in oxides, Parmod Kumar’s book equips you with the knowledge to evaluate, design and innovate. Add this essential title to your collection and stay at the forefront of defect-driven magnetism research and oxide semiconductor technology. Order your copy today.

Note: eBooks do not include supplementary materials such as CDs, access codes, etc.