GaN Transistor Modeling for RF and Power Electronics 1st Edition

Capture the future of semiconductor design with GaN Transistor Modeling for RF and Power Electronics, 1st Edition — an essential resource by Yogesh Singh Chauhan; Ahtisham Ul Haq Pampori; Sheikh Aamir Ahsan. This authoritative guide brings clarity to Gallium Nitride (GaN) device behavior and delivers practical modeling techniques that matter to designers building next-generation RF and power systems.

Whether you are developing high-frequency amplifiers for 5G base stations, high-efficiency converters for electric vehicles, or robust transmitters for satellite and defense applications, this book explains device physics, compact model formulation, parameter extraction, and thermal and nonlinear effects in a concise, accessible way. Detailed examples bridge theory and simulation, helping you translate S-parameters, DC-IV curves, and large-signal measurements into accurate circuit-level models for SPICE and system analysis.

Readable yet technically rich, the text suits graduate students, R&D engineers, and industry professionals across global markets — from India and Asia to Europe and North America. It emphasizes real-world applicability: measurement best practices, model validation, and strategies to optimize GaN devices for reliability and performance under high-power, high-frequency stresses.

If you need a single, modern reference to master GaN transistor modeling and accelerate product development cycles, this 1st Edition is the practical, research-backed resource that delivers. Order your copy today to build more efficient, higher-performing RF and power electronics with confidence.

Note: eBooks do not include supplementary materials such as CDs, access codes, etc.