Tunneling Field Effect Transistors 1st Edition

Tunneling Field Effect Transistors 1st Edition (by) presents a timely, authoritative exploration of tunneling field-effect transistors (TFETs)—the promising devices redefining ultra-low-power semiconductor design. This clear, focused volume captures the physics, modeling, fabrication and practical application of TFET technology for engineers, researchers and advanced students.

Readers will find lucid explanations of quantum tunneling mechanisms, device architectures, material options (including III-V and 2D materials), and circuit-level implications. Detailed chapters bridge theory and practice: device physics and transport models, simulation techniques, performance benchmarks versus MOSFETs, and fabrication challenges that impact yield and scalability. Real-world use cases in IoT, wearable electronics, energy-harvesting systems and low-power ICs illustrate why TFETs matter for tomorrow’s Books.

Engineered for usability, the book balances rigorous analysis with pragmatic design guidance—helpful for device engineers optimizing subthreshold swing, circuit designers seeking energy-efficient blocks, and academics shaping research agendas. Emphasis on measurable metrics, design trade-offs and comparative studies equips readers to evaluate TFET viability in diverse applications.

Whether you’re in North America, Europe, India or the Asia-Pacific region, this edition is an essential reference for those working in nanoelectronics, semiconductor R&D and advanced microelectronics courses. Concise, well-organized and up-to-date, it’s perfect for technical libraries, graduate coursework and product development teams aiming to leverage TFETs for next-generation low-power systems.

Order your copy today to stay at the forefront of device innovation and gain practical insights that accelerate research and design in the global semiconductor landscape.

Note: eBooks do not include supplementary materials such as CDs, access codes, etc.