3D Integration of Resistive Switching Memory 1st Edition

3D Integration of Resistive Switching Memory, 1st Edition by Qing Luo

Cutting through the noise of next‑generation memory research, this authoritative volume delivers a clear, practical guide to 3D integration of resistive switching memory (RRAM). Engineered for professionals tackling density, speed, and power challenges, the book opens with an accessible overview and moves quickly into device physics, materials, fabrication techniques, and system‑level integration — all in one concise reference.

Readers will find in‑depth explanations of resistive switching mechanisms, vertical stacking strategies, monolithic 3D architectures, and reliability and endurance considerations. Emphasis on real‑world design tradeoffs, process compatibility with CMOS, and modeling approaches makes this title invaluable for device engineers, process developers, and system architects. Case studies and comparative analyses highlight how RRAM can meet the demands of AI accelerators, IoT edge nodes, and high‑density storage solutions.

Written for a global audience, the book speaks directly to innovators in major semiconductor hubs — from Silicon Valley and Shenzhen to Dresden and Hsinchu — offering actionable insights that translate across research labs and industrial fabs. Clear figures, step‑by‑step discussions, and practical recommendations help shorten development cycles and de‑risk integration projects.

Whether you are an experienced memory researcher or a development engineer exploring 3D integration options, Qing Luo’s 1st Edition is a strategic investment in future‑proofing your designs. Secure your copy today to gain the technical clarity and applied perspective needed to move RRAM from concept to scalable, high‑performance reality.

Note: eBooks do not include supplementary materials such as CDs, access codes, etc.