Handbook of Silicon Carbide Materials and Devices 1st Edition

Handbook of Silicon Carbide Materials and Devices, 1st Edition by Chuan Feng, Zhe is an indispensable resource for engineers, researchers, and graduate students working with silicon carbide (SiC) and wide-bandgap semiconductor technology. This clear, authoritative handbook brings together the fundamentals of SiC materials, crystal growth and epitaxy, device fabrication, characterization techniques, and practical applications in power electronics and high-temperature systems.

Discover concise, well-organized chapters that explain SiC’s material properties, defect control, doping strategies, and interface engineering—paired with in-depth coverage of diodes, MOSFETs, JFETs, and other SiC devices. The book balances theory and practice, showing how innovations in SiC translate into more efficient converters, electric vehicle powertrains, renewable energy inverters, and aerospace electronics. Detailed illustrations and real-world examples make complex concepts accessible without sacrificing technical rigor.

Designed for a global audience—from North American and European research labs to Asia’s manufacturing hubs—this handbook is an essential reference for anyone designing or evaluating SiC devices. Whether you’re optimizing device yield, improving thermal management, or developing next-generation power systems, the clear explanations and practical insights will speed problem-solving and inform strategic decisions.

Practical, current, and meticulously edited, Handbook of Silicon Carbide Materials and Devices is the go-to guide for staying at the forefront of SiC technology. Add this definitive volume by Chuan Feng, Zhe to your professional library today to accelerate development and deepen your mastery of silicon carbide materials and devices.

Note: eBooks do not include supplementary materials such as CDs, access codes, etc.